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ALUMINUM NITRIDE AlN 40.99 |
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CAS |
24304-00-5 |
|
Melting Point °C |
2200 |
|
Boiling Point °C |
2517 |
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Density G/Cm3 |
3.26 |
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Mohs Hardness @ 20 °C |
9-10 |
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Al% |
65.8 |
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N% |
34.2 |
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Crystal Structure |
Hex |
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Catalog No
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Product Description
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Purity % |
Particle Size |
Cost Per Pound
|
|
1-2 |
3-10 |
11-25 |
26-100 |
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AL-501 |
aluminum nitride powder, white to gray hexagonal crystals |
99.9 |
7-10 micron |
127.51 |
95.63 |
89.11 |
inquire |
|
AL-502 |
aluminum nitride powder |
99.9 |
-325 mesh |
120.53 |
90.40 |
84.24 |
inquire |
|
AL-503 |
aluminum nitride powder |
99.9 |
+325 mesh |
inquire |
|
AL-504 |
aluminum nitride powder |
99.9 |
-100+325 mesh |
inquire |
|
AL-530 |
aluminum nitride pressure sintered granules |
99.9 |
3-6 mm |
inquire |
|
AL-580 |
aluminum nitride sputtering targets |
99.5-99.9 |
inquire |
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BACKGROUND:
Aluminum nitride was first synthesized in 1877. In the 1980's, it was recognized for its potential for use in microelectronics, because of its high level of thermal conductivity. In air, surface oxidation occurs above 700°C. Above 1370°C, bulk oxidation occurs. Aluminum nitride dissolves slowly in mineral acids and strong alkalis. It hydrolyzes slowly in water. Aluminum nitride is resistant to most molten salts.
ALUMINUM NITRIDE POWDER APPLICATIONS:
Metallization methods are available to allow aluminum nitride to be used in electronics applications similar to those of alumina and Beryllium oxide.
LIGHT EMITTING DIODES
There is current research into development of light emitting diodes for operation in ultraviolet.
SURFACE ACOUSTIC WAVE SENSORS
Epitaxially grown crystalline aluminum nitride is used for surface acoustic wave sensors used on silicon wafers. Aluminum nitride is used for its piezoelectric properties. After more than a decade, a mobile phone called the FBAR was developed with a RF filter.
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