AEE - HAFNIUM OXIDE with uses and links to HfO2 documents

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Interactive OnLine Periodic Table - Click on the Atomic Symbol to see the Atomic Weight, number, history & physical description. Includes CAS, density, crystal structure, % purity, and particle size for each product
Metal Powders & Compounds for Research & Industry
AEE Website Table of Contents

HAFNIUM OXIDE HfO₂ ^210.49
CAS	12055-23-1
Melting Point °C	2758
Boiling Point °C	5400
Density G/Cm³	9.68
Elec Resistivity Microhm-Cm	4.5 x 10³@1100°C
Crystal Structure	Cubic

REFERENCE DATA
Grit Size Conversion from mesh size Element Properties with descriptions Contstants Minerals by Hardness Metal Content of Minerals Distinct Color of Minerals Scientific Conversion Factors4000+ MOHS Scale of Hardness Temperature Typical Chemistry Materials by Density The AEE Story

Catalog
No

Product Description

Purity
%

Particle
Size

Cost Per Pound

1-2

3-10

11-25

26-100

HF-600

hafnium oxide powder (2,000 ppm Zr)

99.5

-325 mesh

inquire

HF-601

hafnium oxide powder

99.9

-325 mesh

inquire

HF-610

hafnium oxide (500-700 ppm Zr)

99.995

**

inquire

HF-615

hafnium oxide Spectro Grade
(<50 ppm Zr)

99.998

**

inquire

** HF-610 & HF-615 are available in the following sizes: 4.0-4.5 g, 6-8 x 10 mm pressure sintered pellets, 1-4 mm granules (black or white), -100 mesh powder, -200 mesh powder

Catalog No	Product Description	Purity %	Particle Size	Cost Per Pound
1-2	3-10	11-25	26-100
HF-600	hafnium oxide powder (2,000 ppm Zr)	99.5	-325 mesh	inquire
HF-601	hafnium oxide powder	99.9	-325 mesh	inquire
HF-610	hafnium oxide (500-700 ppm Zr)	99.995	**	inquire
HF-615	hafnium oxide Spectro Grade (<50 ppm Zr)	99.998	**	inquire
** HF-610 & HF-615 are available in the following sizes: 4.0-4.5 g, 6-8 x 10 mm pressure sintered pellets, 1-4 mm granules (black or white), -100 mesh powder, -200 mesh powder

USES:
Hafnium Oxide HfO2 is used in optical coatings, and as a high-k dielectric in DRAM capacitors. Hafnium based oxides are currently leading candidates to replace silicon oxide as a gate insulator in field effect transistors.

Appears to have planned use by both IBM and Intel to continue scaling down semiconductor features to continue Moore's Law, to continue to increase logic density in computer processors, increase clock speeds, or lower power consumption.

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HAFNIUM OXIDE LINKS OF INTEREST:
NY Times Jan 2007 Univ of Texas Gate Dielectric Study
Chemistry World Mar 2007 Thin Film Effects of Hf O₂
More Hafnium Products Nitration of Hf O₂ by Sputtering

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13 Foster Street, Bergenfield, NJ 07621
Phone: (800) 486-2436 or (201) 384-5606
FAX: 201-387-0291

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